vishay siliconix si1403dl new product document number: 71072 s-60364?rev. c, 13-mar-06 www.vishay.com 1 p-channel 2.5-v (g-s) mosfet features ?trenchfet ? power mosfet product summary v ds (v) r ds(on) ( ) i d (a) - 25 0.180 at v gs = - 4.5 v 1.5 0.200 at v gs = - 3.6 v 1.4 0.265 at v gs = - 2.5 v 1.2 notes: a. surface mounted on 1" x 1" fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 sec steady state unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t a = 25 c i d 1.5 1.4 a t a = 85 c 1.2 1.0 pulsed drain current i dm 5 continuous diode current (diode conduction) a i s - 0.8 - 0.8 maximum power dissipation a t a = 25 c p d 0.625 0.568 w t a = 85 c 0.400 0.295 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 sec r thja 165 200 c/w steady state 180 220 maximum junction-to-foot (drain) steady state r thjf 105 130 sot-363 sc-70 (6-leads) 6 4 1 2 3 5 to p v ie w d d g d d s marking code oa xx lot tracea b ility and date code part # code y y ordering information: SI1403DL-T1 SI1403DL-T1-e3 (lead (p b )-free) a v aila b le p b -free rohs* compliant
www.vishay.com 2 document number: 71072 s-60364?rev. c, 13-mar-06 vishay siliconix si1403dl new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics t a = 25 c, unless noted specifications t j = 25 c, unless otherwise noted parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs, i d = - 250 a - 0.6 - 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 85 c - 5 on-state drain current a i d(on) v ds = - 5 v, v gs = - 4.5 v - 2 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 1.5 a 0.145 0.180 v gs = - 3.6 v, i d = - 1.4 a 0.165 0.200 v gs = - 2.5 v, i d = - 0.8 a 0.220 0.265 forward transconductance a g fs v gs = - 10 v, i d = - 1.5 a 3.8 s diode forward voltage a v sd i s = - 0.8, v gs = 0 v - 0.78 - 1.1 v dynamic b total gate charge q g v ds = - 10 v, v gs = - 4.5 v, i d = - 1.5 a 3.7 4.5 nc gate-source charge q gs 0.9 gate-drain charge q gd 0.9 tu r n - o n d e l ay t i m e t d(on) v dd = -10 v, r l = 10 i d ? - 1 a, v gen = - 4.5 v, r g = 6 812 ns rise time t r 25 40 turn-off delaytime t d(off) 21 32 fall time t f 20 30 source-drain reverse recovery time t rr i f = - 0.8 a, di/dt = 100 a/s 20 40 output characteristics 0 0. 8 1.6 2.4 3.2 4.0 00. 8 1.6 2.4 3.2 4.0 v gs = 5 thr u 2.5 v 2 v v ds drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d ? i d 1, 1.5 v ? transfer characteristics 0 0. 8 1.6 2.4 3.2 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 t c = - 55 c 125 c 25 c v gs ? gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d ? i d
document number: 71072 s-60364?rev. c, 13-mar-06 www.vishay.com 3 vishay siliconix si1403dl new product typical characteristics t a = 25 c, unless noted on-resistance vs. drain current gate charge capacitance e ( ) c n a t s i s e r - n o ? r ) n o ( s d 0 0.0 8 0.16 0.24 0.32 0.40 01234 i d ? drain c u rrent (a) v gs = 3.6 v v gs = 2.5 v v gs = 4.5 v 0 1 2 3 4 5 01234 v ds = 10 v i d = 1.5 a ) v ( e g a t l o v e c r u o s - o t - e t a g ? q g ? total gate charge (nc) v s g 0 0.2 0.4 0.6 0. 8 1.0 1. 2 t j = 150 c t j = 25 c 5 1 0.1 v sd ? so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s ? i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 100 200 300 400 500 600 04 8 12 16 20 v ds ? drain-to-so u rce v oltage ( v ) c rss c oss c iss ) f p ( e c n a t i c a p a c ? c 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 15 0 v gs = 4.5 v i d = 1.5 a t j ? j u nction temperat u re (c) ) d e z i l a m r o n ( e ( ) c n a t s i s e r - n o ? r ) n o ( s d 0 0.1 0.2 0.3 0.4 0.5 012345 i d = 1.5 a e ( ) c n a t s i s e r - n o ? r ) n o ( s d gs ? gate-to-so u rce v oltage ( v ) i d = 0. 8 a v
www.vishay.com 4 document number: 71072 s-60364?rev. c, 13-mar-06 vishay siliconix si1403dl new product typical characteristics t a = 25 c, unless noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?71072. threshold voltage - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( e c n a i r a v v ) h t ( s g t j ? temperat u re (c) single pulse power, junction-to-ambient 0 6 10 2 4 ) w ( r e w o p time (sec) 8 130 10 10 ?1 10 ?2 normalized thermal transient impedance, junction-to-ambient 10 ?3 10 ?2 110 60 0 10 ?1 10 ?4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 1 8 0 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 ?3 10 ?2 110 10 ?1 10 ?4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t
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